مكتب الاستشارات القانونية في ميدان الطاقة الشمسية Solar Energy Legal Services

تشكل الطاقة الشمسية إحدى أهم المصادر الرئيسية للطاقة العالمية خارج الطاقة التقليدية كونها طاقة نظيفة وغير ملوثة، كما تتميز بالتجدد التلقائي والديمومة، وهو ما جعل الدولة الجزائرية تضع استراتيجيات وسياسات تهدف من ورائها إلى تشجيع الاستثمار في هذا النوع من الطاقات، وذلك كجزء من الجهود المبذولة لتعزيز حصتها في توليد الكهرباء، بهدف المحافظة على مواردها من الطاقات الناضبة والأحفورية، وتنويع الاقتصاد، بالإضافة إلى تحقيق الأمن الطاقوي وتثمين دورها في إرساء الصيغة المستديمة في الإمداد، بغية ضمان تأمين احتياجاتها الطاقوية مع الوفاء بجميع التزاماتها اتجاه البيئة والسكان

Étude de l’influence du recuit sur les propriétés optoélectroniques des cellules solaires à base de silicium.

La technique de recuit thermique rapide (RTP) fournit un environnement contrôlé approprié pour les processus thermiquement activés dans le domaine des technologies des semi-conducteurs à base de plaquettes de silicium. En outre, le process RTP est entièrement intégré dans la production de cellules solaires, y compris la diffusion du phosphore pour la formation de jonction N-P, le piégeage des impuretés et le recuit de métallisation après l’étape de sérigraphie des cellules solaires. Cette dernière étape fait suite à un dépôt d'environ 80 nm d'une couche de nitrure (SiNx:H) par un procédé appelé dépôt chimique en phase vapeur assisté par plasma (PECVD) sur la face avant de la cellule, la surface du silicium est recouverte d'une couche de SiNx:H servant de protection et de revêtement anti-réfléchissant (ARC).........

Etude et contrôle d'une cellule solaire à base de silicium par carte Arduino associée au logiciel MATLAB/Simulink

Les impuretés, telles que le bore et l'oxygène, sont courantes dans les cellules solaires à base de silicium, le bore est un dopant de type p standard, aussi l'oxygène est inévitable pendant l'élaboration du silicium. De plus, ces impuretés sont connues pour former des défauts actifs de recombinaison dans les cellules solaires Cz-Si et mc-Si dopées au bore, durant l'illumination, ce qui est connu sous le nom de dégradation induite par la lumière liée au bore-oxygène (BO-LID) [1,2]. L'impact négatif du LID sur l'efficacité des cellules solaires est inévitable et peut entraîner jusqu'à 10 % de perte d'efficacité....

Analyse et étude des cellules solaires à base de silicium par le phénomène d'électroluminescence.

Developments of photovoltaic industry have made it possible to considerably reduce the thickness of silicon-based solar cells while increasing their absorption surfaces in order to optimize their yields as much as possible......

Influence de la concentration du gallium sur la réponse spectrale des couches minces CuIn1-xGxSe2 déposées sur des substrats en acier inoxydable.

Renewable and sustainable energies are a concrete alternative to fossil fuel resources, in particular solar energy, which has attracted particular attention. This type of technology uses a device called photovoltaic (PV) panels, which are made up of solar cells made mainly from a semiconductor material. The latter has properties that allow it to absorb and convert sunlight into electrical charges. Currently, silicon-based solar cells are the most widely used in the solar energy industry. However, this type of cell is sensitive to variation in the amount of direct light it receives, a decrease in illumination of one or all of the surface of the PV panel can cause a drop in light to electricity conversion and therefore a significant reduction in the efficiency of the PV panel. In addition, if the shading is important on a part of the panel, the nonilluminated part can become resistive and little damage is created in the PV panel, which can subsequently affect its proper functioning. This degradation phenomenon is linked to the opto-electric nature of the silicon absorbing layer of the solar cell. In addition, studies of silicon-based cells have shown cell absorption activity in a restricted area between visible solar radiation and part of the infrared. However, solar radiation is divided into ultraviolet, visible, and infrared rays, so much of this radiation, especially scattered light, is not converted by silicon-based solar cells. Nevertheless, a new generation of solar cells has been introduced in the solar energy industry, based on thin layers of chalcopyrite type semiconductor made of copper, indium, gallium selenide Cu( ) (CIGS), exhibiting stable performance under conditions of low direct illumination, thanks to opto-electric properties which give them a full use of the solar spectrum. In general, CIGS devices have remarkable potential mainly due to their direct bandgap of 1.04 to 1.67 eV depending on the Ga / (Ga + In) ratio. High absorption can be achieved in CIGS solar cells by adjusting the Ga / (Ga + In) ratio. In this context, a study will be carried out on the impact of gallium concentration on the optoelectronic properties of CIGS thin films. These layers are deposited on stainless steel (SS) substrates by cathodic sputtering (PVD), from CIGS ingots with a proportion x = 0.2 and 0.5 prepared by an optimized melting method....

Etude du comportement optoélectronique des cellules solaires à base de silicium multicristallin

Light-induced degradation (LID) in crystalline silicon is known to reduce the efficiency of a solar cell by up to 10%. Two main causes have been identified as the source of the LID phenomenon in solar cells made from monocrystalline silicon doped with boron. These two reactions are defects involving the bore (B) and the oxygen (O) present in the silicon, leading to a reduction in the open circuit voltage (Voc) under real operating conditions. This reduction is largely linked to the recombination of carrier’s charge. In addition, in cells based on multicrystalline silicon (mc-Si), metallic impurities also play a role in increasing light-induced degradation (LID). Therefore, the confirmation of the role of Bore-Oxygen (BO) complexes in the reduction of the lifetime as predominant compared to the rest of the complexes or other defects is a subject of study, other elements and parameters in addition to the formation of the BO complex, are not to be neglected in the LID degradation.

Influence des conditions de recuit RTP sur la dégradation induite Par la lumière (LID) des cellules solaires à base de silicium Multicristallin type p

Light-induced degradation (LID) in crystalline silicon is known to reduce the efficiency of a solar cell by up to 10% [1]. Two main causes have been identified for degradation induced by illumination of solar cells made on boron-doped single crystalline and multi crystalline silicon. Both are fault reactions involving boron in substitutional form (Bs) and oxygen in interstitial form (Oi) present in the silicon, leading to a decrease in the short-circuit current (Isc) and in the voltage in Open circuit (Voc) under operating conditions of solar cells. This decrease is largely due to the recombination of charge carriers [2]. In the multi crystalline silicon (mc-Si), the dissociation of iron (Fei Bs) to Fei and Bs isolated pairs was identified as the most relevant process [2]. In general, metallic impurities are the cause of the increase in light-induced degradation (LID) in multi crystalline silicon. However, researchers have found a decrease in the effect of LID degradation can be obtained following a rapid annealing RTP treatment if maximum temperatures do not depend on 700 ° C [3]. In this work, we study the impact of the temperature of a rapid RTP annealing on the electrical stability of silicon-based solar cells (mu-Si). Two mc-Si solar cells developed at the CRTSE center will be subjected to an RTP cycle with a peak temperature of 620 ° C. The first cell will be protected (CP) from the direct radiative heating of the RTP oven by placing the cell between two protective mc-Si (az-cut) inserts during the heat treatment. The second cell will not be protected (CNP) and will follow the same RTP cycle. The Isc current as well as the Voc voltage will be systematically detected before and after a prolonged illumination of the cells using an artificial source (halogen lamp with a power of 500 W). Subsequently, the concentration of the effective defects (Nt *) will be calculated in order to quantify the type of defect involved in the activation of the LID degradation. Finally, the results obtained experimentally will be compared to a simulation study. The results obtained will reinforce the existing data on the contribution of RTP rapid annealing in the electrical improvement of silicon-based solar cells at the industrial level.

Effet d’un recuit RTP sur la dégradation des propriétés électriques sous éclairement (LID) des plaquettes de silicium Cz type p avec et sans couche barrière de nitrure de silicium SiNx

In recent years, rapid progress has been made in the research and development of solar cells based on silicon. This material is 40% of the solar cells production in the world. Moreover, Cz-silicon wafers can be processed at high temperatures and can give returns well above 20%. However, some defects are activated under illumination and become recombinant for the charge carriers. They, therefore, lead to degradation of carrier lifetime, which affects the efficiency of solar cells based on p-type silicon Cz. This phenomenon is known as degradation under illumination (denoted LID for "light-induced degradation"). Regarding specifically the degradation effect of electrical performance LID is linked to boron-oxygen complex. LID constitutes a major challenge for the photovoltaic industry. It has been shown that it is possible to increase the degraded life (τ) permanently by applying a rapid thermal process (RTP). In this optics, we study of rapid thermal processing (RTP) and its impact on silicon wafers Cz p-type with and without silicon nitride layer SiNx: H. By taking into account the post effect of RTP processing on the change in LID degradation by measuring the lifetime depending on the illumination time. This acquisition was carried out by the method of quasi-steady state (QSSPC). The results demonstrated that the presence of a hydrogen source in the p-type Si-Cz with suitable thermal annealing is necessary for the permanent passivation of photo-generated defects associated with the degradation of carrier lifetime. Also, this passivation is a function of RTP annealing peak. Furthermore, BO complex was identified as the main generator of metastable defects after comparing the results of measured and simulated lifetimes. Moreover, an improvement in the passivation was achieved by the addition of protection during RTP annealing. These results are very promising in understanding the role of the rapid thermal process RTP in efficiency regeneration of solar cells based on silicon Cz.

Etude du post-effet du traitement RTP sur la durée de vie des porteurs de charges dans des plaquettes de silicium Cz type p mesurée à différents temps d’éclairage.

Solar cells made from p-type Cz monocrystalline silicon wafers undergo degradation in performance upon exposure to light. This degradation continues until a stable efficiency well below the initial values. The loss in efficiency can reach 10% or more. This loss of efficiency in Cz-Si solar cells limits their potential in the photovoltaic industry. It was found that this degradation can be temporarily removed by the annealing of the wafer for several minutes at a low-temperature annealing at about 200°C. However, the increase achieved by low annealing temperature is lost after a new light exposure. It has been shown that it is possible to increase the degraded lifetime (τd) permanently using a rapid thermal process (RTP). In this perspective, we will study the effect of the RTP cycle with different temperature peaks (675, 730 and 830°C) on silicon Cz-Si p-type wafers. The processed wafers undergo an artificial light degradation step for 5h duration under 0.5 suns. The lifetimes measured: initial (τ0), arbitrary (τt) (LID during treatment) and the measurement result of the degradation step (τd), will be performed by the method of quasisteady state (QSSPC). Results will be compared to see the effect of the RTP cycle on Si-Cz wafers. The metastable defect responsible for the degradation of lifetime will be determined from experimental results and theoretical models. The improvement of lifetime results by RTP process on silicon bare wafers is very promising, in order to minimize the processing steps, and reach higher solar cell efficiency with a long lifetime PV modules performances. Keywords: c-Si, light-induced degradation, rapid thermal process, QSSPC, BO-LID, spectrophotometry.