Biographical Overview Academic and Professional Profile - Current Position: Professor and Senior Researcher - Academic Rank: Associate Professor at the University of Annaba - Research Status: Research Director Educational Background - June 1978: High School Diploma (Baccalauréat) - Field: Mathematics - Location: Constantine, Algeria - Grade: Satisfactory - January 1983: Diploma in Solid State Physics (D.E.S) - Department of Physics - University of Annaba, Algeria - December 1991: Master's Degree (Magister) - Department of Physics - Badji Mokhtar University - Annaba, Algeria - Distinction: Very Honorable - Thesis: Study of Calcium Exsolution in Pyroxenes (Rock from Hoggar Massif southern Algeria ) - May 2004: doctorat d'état - Department of Physics - Badji Mokhtar University - Annaba, Algeria - Distinction: Very Honorable - Thesis: Structural and Optical Properties Study of CuIn1-xGaxTe2 (Se2) using Transmission Electron Microscopy (TEM) and Photoluminescence (PL) Professional Background: Held teaching and research positions at Badji Mokhtar University - Annaba, specializing in solid-state physics and materials science. Expertise in advanced techniques such as electron microscopy and optical characterization of semiconductor materials. Research Summary: Thin-Film Semiconductor Materials for Photovoltaics Materials Studied: CuInSe₂ (CIS), CuInₓGa₁₋ₓTe₂, ZnO, SnO₂, CuIn₃Se₅, CuAlₓGa₁₋ₓTe₂, Cu₂ZnSnS₄, Cu₂SnSe₃ Focus: Fabrication, structural, and optical properties for photovoltaic and electronic applications. Key Studies: CuInSe₂/Si(100) Thin Films (SEL Technique): Deposited Cu, In, Se layers at 250°C, forming chalcopyrite structure with (112) orientation. Band gap: 0.984 eV; photoluminescence peak at 0.87 eV (donor-acceptor transitions). Cu/In/Se/Se Thin Films (SEL Technique): Analyzed substrate (glass/Si(100)) and temperature effects. Annealing at 450°C improved crystallinity; band gap increased from 0.98 to 1.01 eV. O₂ & H₂ Plasma Treatments on CIS: Passivated grain boundary defects; O₂ (p+ doping) and H₂ (n+ doping) modified electrical properties. CIS from Nanoparticle Powder: Thermally evaporated ball-milled CIS nanoparticles onto glass. Polycrystalline, chalcopyrite structure; band gap: 1.04 eV. Zn Incorporation in CIS: Zn diffusion altered particle size, strain, and conductivity, enabling conduction type conversion. Cu₂SnSe₃ Thin Films: Optimized synthesis (thermal evaporation, sol-gel) for high crystallinity, suitable band gap, and conductivity. Applications: Solar cells, electronic devices—enhancing efficiency, stability, and electrical performance. Techniques: Characterization: XRD, TEM, Raman, EDAX, Hall effect, SEM, spectrophotometry. Synthesis: CVD, PVD, sol-gel, electrodeposition, spin coating, thermal evaporation, mechanical milling. Impact: Advanced semiconductor material development for energy and electronics.